MCQ
An intrinsic semiconductor is converted into $N$-type extrinsic semiconductor by doping it with
- AGermanium
- ✓Phosphorous
- CAluminium
- DSilver
✓
Answer
Correct option: B.
Phosphorous
b
When intrinsic semiconductor (Si or Ge) is doped with a pentavalent element, e.g. $\begin{array}{ll}\text { phosphorus }( P ), & \text { a n-type extrinsic }\end{array}$ semiconductor is created because
pentavalent dopant donates one extra electron for conduction.
When intrinsic semiconductor (Si or Ge) is doped with a pentavalent element, e.g. $\begin{array}{ll}\text { phosphorus }( P ), & \text { a n-type extrinsic }\end{array}$ semiconductor is created because
pentavalent dopant donates one extra electron for conduction.
Need a full question paper?
Generate a complete, print-ready paper with questions like this in minutes — across 16+ boards, with answer keys.
Explore more
Similar questions
The angle of contact between glass and mercury is......... $^o$
→It is hotter for the same distance over the top of a fire than it is in the side of it, mainly because
A planoconvex lens becomes an optical system of $28\, cm$ focal length when its plane surface is silvered and illuminated from left to right as shown in Fig $-A$. If the same lens is instead silvered on the curved surface and illuminated from other side as in Fig. $B$, it acts like an optical system of focal length $10 \,cm$. The refractive index of the material of lens is
→A thin lens made of glass (refractive index $= 1.5$) of focal length $f=16\; \mathrm{cm}$ is immersed in a liquid of refractive index $1.42 .$ If its focal length in liquid is $f_{l},$ then the ratio $f_{l} /f$ is closest to the integer
→Each of the resistance in the network shown in fig. is equal to $R$. The resistance between the terminals $A$ and $B$ is
→If the distance between object and its two times magnified virtual image produced by a curved mirror is $15 \mathrm{~cm}$, the focal length of the mirror must be :
→The emission series of hydrogen atom is given by $\frac{1}{\lambda}=R\left(\frac{1}{n_{1}^{2}}-\frac{1}{n_{2}^{2}}\right)$ where, $R$ is the Rydberg constant. For a transition from $n_{2}$ to $n_{1}$, the relative change $\Delta \lambda / \lambda$ in the emission wavelength, if hydrogen is replaced by deuterium (assume that, the mass of proton and neutron are the same and approximately $2000$ times larger than that of electrons) is ........... $\%$
→The given transistor operates in saturation region then what should the be value of $V _{ BB }$ (in $Volt$)
→$( R _{\text {out }}=200 \Omega, R _{\text {in }}=100 k \Omega,$$ V _{ cC }=3 volt , V _{ BE }=0.7 volt ,V _{ GE }=0, \beta=200 )$
An iron sphere weighing $10\, N$ rests in a $V$ shaped smooth trough whose sides form an angle of $60^o$ as shown in the figure. Then the reaction forces are
→A conducting rod $PQ$ of length $L = \,1.0 \,m$ is moving with a uniform speed $v = 2 \,m/s$ in a uniform magnetic field $B = 4.0\,T$ directed into the paper. A capacitor of capacity $C = 10\, \mu$F is connected as shown in figure. Then
→