C and Si both have the same lattice structure, having 4 bonding e…

MCQ

C and Si both have the same lattice structure, having 4 bonding electrons in each. However, C is an insulator whereas Si is an intrinsic semiconductor. This is because
A. In case of C the valence band is not completely filled at absolute zero temperature.
B. In case of C the conduction band is partly filled even at absolute zero temperature.
C. The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.
D. The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit.

A
Option B
B
Option A
C
Option D
D
Option C

✓

Answer

(d) Option C
Explanation: ${ }^6 C : 1 s^2 2 s^2 2 p^2$
${ }^{14} Si : 1 s^2 2 s^2 2 p^6 3 s^2 3 p^2$
The energy required to take out an electron from the 3rd orbit of Si is much smaller than to take out an electron from the 2nd orbit of C. So, Si has a significant number of free electrons while C has a negligibly small number of free electrons.

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