GaAs is
|
(a) Element semiconductor |
(b) Alloy semiconductor |
|
(c) Bad conductor |
(d) Metallic semiconductor |
GaAs is
|
(a) Element semiconductor |
(b) Alloy semiconductor |
|
(c) Bad conductor |
(d) Metallic semiconductor |
(b) Alloy semiconductor
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A pure semiconductor behaves slightly as a conductor at
|
(a) Room temperature |
(b) Low temperature |
|
(c) High temperature |
(d) Both (b) and (c) |
The material of wire of potentiometer is
|
(a) Copper |
(b) Steel |
(c) Manganin |
(d) Aluminium |
Light of wavelength l = 5000 Å falls normally on a narrow slit. A screen placed at a distance of 1 m from the slit and perpendicular to the direction of light. The first minima of the diffraction pattern is situated at 5 mm from the centre of central maximum. The width of the slit is
|
(a) 0.1 mm |
(b) 1.0 mm |
(c) 0.5 mm |
(d) 0.2 mm |
The electric field near a conducting surface having a uniform surface charge density σ is given by
|
(a) |
(b) |
|
(c) |
(d) |
In a certain charge distribution, all points having zero potential can be joined by a circle S. Points inside S have positive potential and points outside S have negative potential. A positive charge, which is free to move, is placed inside S
|
(a) It will remain in equilibrium |
|
(b) It can move inside S, but it cannot cross S |
|
(c) It must cross S at some time |
|
(d) It may move, but will ultimately return to its starting point |