In a forward biased $P N$-ju nction diode, the potential barrier in the depletion region is of the form ...
A
B
C
D
[KCET 2004]
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B
Potential across the $P N$ junction varies symmetrically linear, having $P$ side negative and $N$ side positive.
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$P$-type semiconductor is formed whenA. As impurity is mixed in $S i$B. $A$ Impurity is mixed in $S i$C. $B$ impurity is mixed in $G e$D. $P$ impurity is mixed in $G e$
In the $C B$ mode of a transistor, when the collector voltage is changed by $0.5$ volt. The collector current changes by $0.05\ mA$. The output resistance will be