Sketch a graph between frequency of incident radiations and stopp… - Vidyadip

Question

Sketch a graph between frequency of incident radiations and stopping potential for a given photosensitive material. What information can be obtained from the value of the intercept on the potential axis? A source of light of frequency greater than the threshold frequency is placed at a distance of 1 m from the cathode of a photo-cell. The stopping potential is found to be V. If the distance of the light source from the cathode is reduced, explain giving reasons, what change will you observe in the.

photoelectric current,
stopping potential.

✓

Answer

Work function or

Photoelectric current increases, due to increase of intensity.
o change, as stopping Potential is independent of intensity.

Need a full question paper?

Generate a complete, print-ready paper with questions like this in minutes — across 16+ boards, with answer keys.

Start Generating Free

Explore more

More "3 Marks Question" from Dual Nature of Radiation and Matter→Dual Nature of Radiation and Matter — all question types→Physics STD 12 Science question papers→Gujarat Board STD 12 Science question papers→Gujarat Board question paper generator→

Similar questions

A straight wire carrying an electric current is placed along the axis of a uniformly charged ring. Will there be a magnetic force on the wire if the ring starts rotating about the wire? If yes, in which direction?

What are eddy currents? How are these produced? In what sense are eddy currents considered undesirable in a transformer and how are these reduced in such a device?

Two identically charged particles are fastened to the two ends of a spring of spring constant 100Nm^-1 and natural length 10cm. The system rests on a smooth horizontal table. If the charge on each particle is 2.0 × 10^-8C, find the extension in the length of the spring. Assume that the extension is small as compared to the natural length. Justify this assumption after you solve the problem.

The product of the hole concentration and the conduction electron concentration turns out to be independent of the amount of any impurity doped. The concentration of conduction electrons in germanium is 6 × 10¹⁹per cubic metre. When some phosphorus impurity is doped into a germanium sample, the concentration of conduction electrons increases to 2 × 10²³ per cubic metre. Find the concentration of the holes in the doped germanium.

In what way is diffraction from each slit related to the interference pattern in a double slit experiment?
Two wavelengths of sodium light 590 nm and 596 nm are used, in turn, to study the diffraction taking place at a single slit of aperture 2 × 10^–4 m. The distance between the slit and the screen is 1.5 m. Calculate the separation between the positions of the first maxima of the diffraction pattern obtained in the two cases.

Does the force on a charge due to another charge depend on the charges present nearby?

Estimate the proportion of boron impurity whieh will increase the conductivity of a pure silicon sample by a factor of 100. Assume that each boron atom creates a hole and the concentration of holes in pure silicon at the same temperature is 7 × 10¹⁵ holes per cubic metre. Density of silicon is 5 × 10²¹ atoms per cubic metre.

Write the functions of the three segments of a transistor.
The figure shows the input waveforms A and B for ‘AND’ gate. Draw the output waveform and write the truth table for this logic gate.

Write any two distinguishing features between conductors, semiconductors and insulators on the basis of energy band diagrams.

Derive equation of magnetic field inside a long straight solenoid.