MCQ
Statement $I :$ When a Si sample is doped with Boron, it becomes $P$ type and when doped by Arsenic it becomes $N-$type semi conductor such that $P-$type has excess holes and N-type has excess electrons.

Statement $II$ : When such $P-$type and $N-$type semi-conductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ammeter.

In the light of above statements, choose the most appropriate answer from the options given below.

  • A
    Both Statement $I$ and statement $II$ are incorrect
  • B
    Statement $I$ is incorrect but statement $II$ is correct
  • C
    Both Statement $I$ and statement $II$ are correct
  • Statement $I$ is correct but statement $II$ is incorrect

Answer

Correct option: D.
Statement $I$ is correct but statement $II$ is incorrect
d
Statement$-I$ is correct

When $P-N$ junction is formed an electric field is generated form $N$-side to $P$-side due to which barrier potential arises \& majority charge carrier can not flow through the junction due to barrier potential so current is $zero$ unless we apply forward bias voltage.

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