Question
What is called P-N junction? Name the methods of making P-N junction. Explain the diffusion method of making $P - N$ junction.

Answer

P-N Junction: If P and N type semiconductors are joined together and kept in such a way that the atoms of the contact plane come together, then the contact plane formed in this way is called $P - N$ junction. There are three methods of making P-N junction :
(1) Growth
(2) Diffusion
(3) Metal Mixture.
Diffusion method of making P-N junction : In this at high temperature in a muffle furnace, impurity semiconductor is formed by bringing the intrinsic semiconductor wafer with appropriate impurity in contact with steam. The impurity semiconductor thus obtained is now known as the opposite impurity diffusion is caused by bringing atoms (P-type semiconductor with V-group element and Ntype semiconductor with III-group element) in contact. The amount of diffusion decreases with depth. As a result, as far as there are impurities in the crystal, joints are present there.

Need a full question paper?

Generate a complete, print-ready paper with questions like this in minutes — across 16+ boards, with answer keys.

Start Generating Free

Similar questions

Using truth tables of AND gate and NOT gate show that NAND gate is an AND gate followed by a NOT gate. Hence write the truth table of NAND gate.
Why are NAND gates called ‘Universal Gates’?
Two identically charged particles are fastened to the two ends of a spring of spring constant 100Nm-1 and natural length 10cm. The system rests on a smooth horizontal table. If the charge on each particle is 2.0 × 10-8C, find the extension in the length of the spring. Assume that the extension is small as compared to the natural length. Justify this assumption after you solve the problem.
A 3cm tall object is placed at a distance of 7.5cm from a convex mirror of focal length 6cm. Find the location, size and nature of the image.
What are isotopes? Explain with an example how the average mass can be obtained from the relative proportions of different isotopes of the same element.
Accepting the relation $\frac{v_s}{v_p}=\frac{ N _s}{N_s}$ for ideal transformer, and using thé formula of power; derive
$\frac{I_p}{I_s}=\frac{v_s}{v_p}=\frac{N_s}{ N _p}$ and from that explain the types of the transformers.
What is an electric cell? Describe its construction. How many types of electric cells are there? By defining electromotive force of a cell, establish an expression for internal resistance of cell in any circuit and state factors on which internal resistance depends.
The equation of a travelling sound wave is $\text{y}=6.0\sin(600\text{t}-1.8\text{x})$ where y is measured in 10-5m, t in second and x in metre.
  1. Find the ratio of the displacement amplitude of the particles to the wavelength of the wave.
  2. Find the ratio of the velocity amplitude of the particles to the wave speed.
A metre scale made of steel is calibrated at 20°C to give correct reading. Find the distance between the 50cm mark and the 51cm mark if the scale is used at 10°C. Coefficient of linear expansion of steel is 1.1 × 10-5 °C-1.
In the study of a photoelectric effect the graph between the stopping potential V and frequency v of the incident radiation on two different metals P and Q is shown below

  1. Which one of the two metals has higher threshold frequency?
  2. Determine the work function of the metal which has greater value.
  3. Find the maximum kinetic energy of electron emitted by light of frequency 8 × 1014 Hz for this metal.
Find the ratio of the linear momenta of two particles of masses 1.0kg and 4.0kg if their kinetic energies are equal.