Physics M.C.Q (1 Marks)

To a germanium sample, traces of gallium are added as an impurity. The resultant sample would behave like

When phosphorus and antimony are mixed in zermaniun, then

The process of adding impurities to the pure semiconductor is called

The energy band gap is maximum in

In a semiconductor

Which impurity is doped in Si to form N-type semi-conductor?

The valence band and conduction band of a solid overlap at low temperature, the solid may be

In intrinsic semiconductor at room temperature, number of electrons and holes are

Electric current is due to drift of electrons in

Resistivity of a semiconductor depends on

In extrinsic semiconductors

Intrinsic semiconductor is electrically neutral. Extrinsic semiconductor having large number of current carriers would be

A piece of semiconductor is connected in series in an electric circuit. On increasing the temperature, the current in the circuit will

In a P-type semi-conductor, germanium is dopped with

Choose the correct statement

Which of the following statements is true for an N-type semi-conductor

In semiconductors at a room temperature

Which of the following has negative temperature coefficient of resistance

When germanium is doped with phosphorus, the doped material has

The charge on a hole is equal to the charge of

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

Donor type impurity is found in

For non-conductors, the energy gap is

At room temperature, a P-type semiconductor has

GaAs is

Semiconductor is damaged by the strong current due to

In N-type semiconductors, majority charge carriers are

In a P-type semiconductor, germanium is doped with

When the temperature of silicon sample is increased from 27℃ to 100℃, the conductivity of silicon will be

At ordinary temperatures, the electrical conductivity of semi conductors in mho/meter is in the range

P-type semiconductors are made by adding impurity element

The band gap in Germanium and silicon in eV respectively is

Which is the correct relation for forbidden energy gap in conductor, semi conductor and insulator

A pure semiconductor behaves slightly as a conductor at

For germanium crystal, the forbidden energy gap in joules is

To obtain electrons as majority charge carriers in a semiconductor, the impurity mixed is

The state of the energy gained by valance electrons when the temperature is raised or when electric field is applied is called as

N-type semiconductors will be obtained, when germanium is doped with

An N-type and P-type silicon can be obtained by doping pure silicon with

Resistance of semiconductor at 0 K is

The addition of antimony atoms to a sample of intrinsic germanium transforms it to a material which is

The intrinsic semiconductor becomes an insulator at

In a semiconductor the separation between conduction band and valence band is of the order of

Fermi level of energy of an intrinsic semiconductor lies

(USS 133) Indium impurity in germanium makes

In intrinsic semiconductor at room temperature, number of electrons and holes are