Physics M.C.Q (1 Marks)

In a P-type semiconductor

Energy bands in solids are a consequence of

In case of a semiconductor, which of the following statement is wrong

The temperature coefficient of resistance of a semiconductor

To obtain a P-type germanium semiconductor, it must be doped with

When N-type of semiconductor is heated

The impurity atom added to germanium to make it N-type semiconductor is

In a good conductor the energy gap between the conduction band and the valence band is

When a semiconductor is heated, its resistance

Electronic configuration of germanium is 2, 8, 18 and 4. To make it extrinsic semiconductor small quantity of antimony is added

At zero Kelvin a piece of germanium 

In P-type semiconductor the majority and minority charge carriers are respectively

The forbidden gap in the energy bands of germanium at room temperature is about

A hole in a P-type semiconductor is

In extrinsic P and N-type, semiconductor materials, the ratio of the impurity atoms to the pure semiconductor atoms is about

Holes are charge carriers in

The impurity atoms which are mixed with pure silicon to make a P-type semiconductor are those of

Wires P and Q have the same resistance at ordinary (room) temperature. When heated, resistance of P increases and that of Q decreases. We conclude that

When Ge crystals are doped with phosphorus atom, then it becomes

Which statement is correct

The energy band gap of Si is

In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of

Three semi-conductors are arranged in the increasing order of their energy gap as follows. The correct arrangement is

Electrical conductivity of a semiconductor

To obtain P-type Si semiconductor, we need to dope pure Si with

A piece of copper and the other of germanium are cooled from the room temperature to 80 K, then which of the following would be a correct statement

When the electrical conductivity of a semi- conductor is due to the breaking of its covalent bonds, then the semiconductor is said to be

Silicon is a semiconductor. If a small amount of As is added to it, then its electrical conductivity

The valence of the impurity atom that is to be added to germanium crystal so as to make it a N-type semiconductor, is 

In P-type semiconductor, there is
 

The valence of an impurity added to germanium crystal in order to convert it into a P-type semi conductor is

A P-type semiconductor can be obtained by adding

The majority charge carriers in P-type semiconductor are

Bonding in a germanium crystal (semi- conductor) is

A solid that transmits light in visible region and has a very low melting point possesses

The distance between the body centred atom and a corner atom in sodium (a = 4.225 Å) is

What is the coordination number of sodium ions in the case of sodium chloride structure

Crystal structure of NaCl is

In a crystal, the atoms are located at the position of

Which one of the following is the weakest kind of bonding in solids

Metallic solids are always opaque because

In a triclinic crystal system

Biaxial crystal among the following is

In good conductors of electricity, the type of bonding that exists is

Copper has face centered cubic (fcc) lattice with interatomic spacing equal to 2.54Å. The value of the lattice constant for this lattice is

Which of the following is an amorphous solid