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Physics M.C.Q (1 Marks)

Semiconductor Electronics: Materials, Devices and Simple Circuits · Rajasthan Board (RBSE) STD 12 Science (Rajasthan - English Medium). 29 questions.

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M.C.Q (1 Marks)

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29 questions · 4 auto-graded MCQ + 25 self-marked written.

Question 91 Mark
The ratio of resistance in forward and reverse bias arrangements in a $P - N$ junction diode is :
Answer
(c) - $1: 10^4$
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Question 121 Mark
The ratio of the number of electrons and holes in intrinsic semiconductors at normal temperature is :
Answer
(c) - $1: 1$
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Question 141 Mark
Which of the following statements is false?
Answer
(c) - The resistance of a conductor decreases as temperature increases.
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Question 161 Mark
When the impurity of arsenic is added to the pure semiconductor germanium, it will be present :
Answer
(b) - N-type semiconductor
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Question 181 Mark
Which of the following statements is incorrect?
Answer
(d) - Holes in P-type semiconductor are minority charge carriers.
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Question 221 Mark
Those substances whose valence band and conduction band are almost in a state of overlap are :
Answer
(a) - Conductor
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Question 231 Mark
At absolute zero temperature, there are negatives germanium and negative silicon are :
Answer
(c) - ideal insulator
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Question 241 Mark
In an insulator, the forbidden energy gap between valence band and conduction band is of the following order :
Answer
(b) - 6 eV
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MCQ 261 Mark
When a forward bias is applied to a p-n junction, it
  • A
    raises the potential barrier.
  • B
    reduces the majority carrier current to zero.
  • ✓
    lowers the potential barrier.
  • D
    None of the above.
Answer
Correct option: C.
lowers the potential barrier.
C
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MCQ 271 Mark
In an unbised p-n junction, holes diffuse from the p-region to n-region because
  • A
    free electrons in the n-region attract them.
  • B
    they move across the junction by the potential difference.
  • ✓
    hole concentration in p-region is more as compared to n-region.
  • D
    All the above.
Answer
Correct option: C.
hole concentration in p-region is more as compared to n-region.
C
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MCQ 281 Mark
Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to $\left(E_g\right)_C,\left(E_g\right)_{S i}$ and $\left(E_g\right)_{G e}$. Which of the following statements is true?
  • A
    $\left( E _{ g }\right)_{ Si }<\left( E _{ g }\right)_{ Ge }<\left( E _{ g }\right)_{ C }$
  • B
    $\left( E _{ g }\right)_{ C }<\left( E _{ g }\right)_{ Ge }>\left( E _{ g }\right)_{ Si }$
  • ✓
    $\left( E _{ g }\right)_{ C }>\left( E _{ g }\right)_{ Si }>\left( E _{ g }\right)_{ Ge }$
  • D
    $\left( E _{ g }\right)_{ C }=\left( E _{ g }\right)_{ Si }=\left( E _{ g }\right)_{ Ge }$
Answer
Correct option: C.
$\left( E _{ g }\right)_{ C }>\left( E _{ g }\right)_{ Si }>\left( E _{ g }\right)_{ Ge }$
C
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MCQ 291 Mark
In an n-type silicon, which of the following statement is true :
  • A
    Electrons are majority carriers and trivalent atoms are the dopants.
  • B
    Electrons are minority carriers and pentavalent atoms are the dopants.
  • ✓
    Holes are minority carriers and pentavalent atoms are the dopants.
  • D
    Holes are majority carriers and trivalent atoms are the dopants.
Answer
Correct option: C.
Holes are minority carriers and pentavalent atoms are the dopants.
C
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M.C.Q (1 Marks) - Physics STD 12 Science Questions - Vidyadip