A semiconductor device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops almost to zero. The device may be
AA $P$-type semiconductor
B
An N-type semiconductor
CA $P N$-junction
D
An intrinsic semiconductor
[MP PET 1995; CBSE PMT 1998]
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CA $P N$-junction
When polarity of the battery is reversed, the $P-N$ junction becomes reverse biased so no current flows.
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A potential barrier of $0.50 \quad V$ exists across a $P-N$ junction. If the depletion region is $5.0 \times 10^{-7} m$ wide, the intensity of the electric field in this region is
For a thermionic emitter (metallic) if $J$ represents the current density and $T$ is its absolute temperature then the correct curve between $\log _e \frac{J}{T^2}$ and $\frac{1}{T}$ is