For the diode, the characteristic curves are given at different temperature. The relation between the temperatures is
A(a) $T_1=T_2=T_3$
B(b) $T_1
C(c) $T_1>T_2>T_3$
D
(d) None of the above
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B(b) $T_1
(b) As temperature increases saturation current also increases.
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The electron mobility in $N$-type germanium is $3900 cm / v - s$ and its conductivity is $6.24 mho / cm$, then impurity concentration will be if the effect of cotters is negligible
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A $G e$ specimen is doped with $A l$. The concentration of acceptor atoms is $\sim 10^{-}$atoms $/ m$. Given that the intrinsic concentration of electron hole pairs is $\sim 10^{19} / m ^3$, the concentration of electrons in the specimen is