A semiconductor $X$ is made by doping a germanium crystal with arsenic $(Z=33)$. A second semiconductor $Y$ is made by doping germanium with indium $(Z=49)$. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct

Q: A semiconductor $X$ is made by doping a germanium crystal with arsenic $(Z=33)$. A second semiconductor $Y$ is made by doping germanium with indium $(Z=49)$. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct

(d) Arsenic has five valence electrons, so it a donor impurity. Hence $X$ becomes $N$-type semiconductor. Indium has only three outer electrons, so it is an acceptor impurity. Hence $Y$ becomes $P$-type semiconductor. Also $N$ (i.e. $X$ ) is connected to positive terminal of battery and $P($ i.e. $Y)$ is connected to negative terminal of battery so $P N$-junction is reverse biased.

Question

A(a) $X$ is $P$-type, $Y$ is $N$-type and the junction is forward biased
B(b) $X$ is $N$-type, $Y$ is $P$-type and the junction is forward biased
C(c) $X$ is $P$-type, $Y$ is $N$-type and the junction is reverse biased
D(d) $X$ is $N$-type, $Y$ is $P$-type and the junction is reverse biased

[Orissa JEE 1998]

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