GaAs is
|
(a) Element semiconductor |
(b) Alloy semiconductor |
|
(c) Bad conductor |
(d) Metallic semiconductor |
GaAs is
|
(a) Element semiconductor |
(b) Alloy semiconductor |
|
(c) Bad conductor |
(d) Metallic semiconductor |
(b) Alloy semiconductor
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The absorption transitions between the first and the fourth energy states of hydrogen atom are 3. The emission transitions between these states will be
|
(a) 3 |
(b) 4 |
(c) 5 |
(d) 6 |
A voltmeter has resistance of 2000 ohms and it can measure upto 2V. If we want to increase its range to 10 V, then the required resistance in series will be
|
(a) 2000 Ω |
(b) 4000 Ω |
(c) 6000 Ω |
(d) 8000 Ω |
The time of revolution of an electron around a nucleus of charge Ze in nth Bohr orbit is directly proportional to
|
(a) n |
(b) |
(c) |
(d) |
Pure inductance of 3.0 H is connected as shown below. The equivalent inductance of the circuit is

|
(a) 1 H |
(b) 2 H |
(c) 3 H |
(d) 9 H |
Assertion : Two P-N junction diodes placed back to back, will work as a NPN transistor.
Reason : The P-region of two PN junction diodes back to back will form the base of NPN transistor.
|
(a) If both assertion and reason are true and the reason is the correct explanation of the assertion. |
|
(b) If both assertion and reason are true but reason is not the correct explanation of the assertion. |
|
(c) If assertion is true but reason is false. |
|
(d) If the assertion and reason both are false. |
If intensity of incident light is increased in PEE then which of the following is true
|
(a) Maximum K.E. of ejected electron will increase |
|
(b) Work function will remain unchanged |
|
(c) Stopping potential will decrease |
|
(d) Maximum K.E. of ejected electron will decrease |
In the following figure, the magnet is moved towards the coil with a speed v and induced emf is e. If magnet and coil recede away from one another each moving with speed v, the induced emf in the coil will be

|
(a) e |
(b) 2e |
(c) e/2 |
(d) 4e |