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We know that in the transistor base is slightly doped, therefore when the majority carriers due to forward biasing of emitter base junction, feel the repulsive force from the battery and pass over to the base region. This gives the emitter current $i_E$.
As the base is thin and lightly doped, only few majority carriers of the emitter are neutralised at the base. This gives the base current.
Hence, base current $(i_B)$ is low.
The remaining majority carriers of the emitter pass to the collector and give collector current $i_C$.
Thus, we get the relation given below:
$i_E= i_B+ i_C$
Thus, because of the base, current $\mathrm{i}_{\mathrm{C}}$ is slightly smaller than $\mathrm{i}_{\mathrm{E}}$.
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$(a)$ Maximum current $(I_m)$ increases
$(b)$ Sharpness of the graph increases
$(c)$ Quality factor increases
$(d)$ Band width increases
