Let $n_P$ and $n_e$ be the number of holes and conduction electrons respectively in a semiconductor. Then
A(a) $n_{P} ! n_e$ in an intrinsic semiconductor
B(b) $n_P \quad n_e$ in an extrinsic semiconductor
C(c) $n_P \quad n_e$ in an intrinsic semiconductor
D(d) $n_{e} ! n_P$ in an intrinsic semiconductor
[MP PET 1995]
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C(c) $n_P \quad n_e$ in an intrinsic semiconductor
(c) In intrinsic semiconductors, the creation or liberation of one free electron by the thermal energy has created one hole. Thus in intrinsic semiconductors $n=n$.
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The figure represents variation of triode parameter ( $\mu$ or $r$ or $g$ ) with the plate current. The correct variation of $\mu$ and $r$ are given, respectively by the curves