Resistance in forward biasing $\mathrm{R}_{\mathrm{fr}} \approx 10 \Omega$ and resistance in reverse biasing
$\mathrm{R}_{\mathrm{Rw}} \approx 10^5 \Omega \Rightarrow \frac{\mathrm{R}_{\mathrm{fr}}}{\mathrm{R}_{\mathrm{Rw}}}=\frac{1}{10^4}$
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The electron mobility in $N$-type germanium is $3900 cm / v - s$ and its conductivity is $6.24 mho / cm$, then impurity concentration will be if the effect of cotters is negligible