When $N P N$ transistor is used as an amplifier, majority charge carrier electrons of $N$-type emitter move from emitter to base and than base to collector.
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Wires $P$ and $Q$ have the same resistance at ordinary (room) temperature. When heated, resistance of $P$ increases and that of $Q$ decreases. We conclude that
Before the saturation state of a diode at the plate voltages of $400 V$ and $200 V$ respectively the currents are $i$ and $i$ respectively. The ratio $i / i$ will be
Carbon, silicon and Germanium atoms have four valence electrons each. Their valence and conduction band are separated by energy band gaps represented by $(E) .(E)$ and $(E)$ respectively. Which one of the following relationship is true in their case