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What is the number density of donor atoms which must be added to a pure germanium semiconductor to make $n-$ type semiconductor of conductivity $6.4\ {\Omega ^{ - 1}}\,c{m^{ - 1}}$? The mobility of electr ons in $n-$ type germanium is $4 \times {10^3}\ cm^2\ V^{-1}\ s^{-1}$. Neglect the contribution of holes to conductivity
A current of $3\,amp$ flows through the $2\,\Omega $ resistor shown in the circuit. The power dissipated in the $5\,\Omega $ resistor is ................. $watt$
As shown in the figure, a network of resistors is connected to a battery of $2\,V$ with an internal resistance of $3\,\Omega$. The currents through the resistors $R_4$ and $R_5$ are $I_4$ and $I_5$ respectively. The values of $I_4$ and $I_5$ are :
A current of $1.6\, A$ is flowing through a wire having cross-sectional area $1\, mm^2$. If density of free electrons in the material of the wire is $10^{29}\, per\, m^3$, the drift velocity of electrons will be
A $1\,m$ long copper wire carries a current of $1\,A$. If the cross section of the wire is $2.0\,mm ^{2}$ and the resistivity of copper is $1.7 \times 10^{-8}\,\Omega\,m$. the force experienced by moving electron in the wire is $\times 10^{-23}\,N$. (charge on electron $=1.6 \times 10^{-19}\,C$ )
A wheatstone bridge is used to determine the value of unknown resistance $X$ by adjusting the variable resistance $Y$ as shown in the figure. For the most precise measurement of $X$, the resistances $P$ and $Q$:
A circuit of resistacne $R$ is connected to $n$ similar cells. If the current in the circuit is the same when the cells are connected in series or in parallel. If the internal resistacne $r$ of each cell then