- AMoving with a constant velocity.
- BMoving in a circular orbit.
- CAt rest.
- DFalling in an electric field.
Solution:
Key concept:
Here, in option (b) charge is moving in a circular orbit.
In circular motion, the direction of the motion of charge is changing continuously, thus it is an accelerated motion and this option is correct.
In option (d), the charge is falling in electric field. If a charged particle is moving in electric field it experiences a force or we can say it accelerates. We know an accelerating charge particle radiates electromagnetic waves. Hence option (d) is also correct.
Also, we know that a charge starts accelerating when it falls in an electric field.
Important points:
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A charge moving with velocity v in X-direction is subjected to a field of magnetic induction in the negative X-direction. As a result, the charge will
|
(a) Remain unaffected |
|
(b) Start moving in a circular path Y-Z plane |
|
(c) Retard along X-axis |
|
(d) Move along a helical path around X-axis |
Shown below is a distribution of charges. The flux of electric field due to these charges through the surface S is
|
(a) 3q/ |
(b) 2q/ |
(c) q/ |
(d) Zero |
For the sustained interference of light, the necessary condition is that the two sources should
|
(a) Have constant phase difference |
(b) Be narrow |
|
(c) Be close to each other |
(d) Of same amplitude |
Consider an electron (m = 9.1
confined by electrical forces to move between two rigid walls separated by 1.0
metre, which is about five atomic diameters. The quantised energy value for the lowest stationary state is
|
(a) 12 |
(b) 6.0 |
(c) 6.0 |
(d) 6 Joule |
The effective resistance between points A and B is
|
(a) 10 Ω |
(b) 20 Ω |
|
(c) 40 Ω |
(d) None of the above three values |
In the following Wheatstone bridge P/Q = R/S. If key K is closed, then the galvanometer will show deflection
|
(a) In left side |
(b) In right side |
(c) No deflection |
(d) In either side |
Which of the following statements is not true
|
(a) The resistance of intrinsic semiconductors decrease with increase of temperature |
|
(b) Doping pure Si with trivalent impurities give P-type semiconductors |
|
(c) The majority carriers in N-type semiconductors are holes |
|
(d) A PN-junction can act as a semiconductor diode |