Which of the following statements is true for an N-type semiconductor
  • A
    The donor level lies closely below the bottom of the conduction band
  • B
    The donor level lies closely above the top of the valence band
  • C
    The donor level lies at the halfway mark of the forbidden energy gap
  • D
    None of above
[CPMT 2004]
art

Download our app
and get started for free

Experience the future of education. Simply download our apps or reach out to us for more information. Let's shape the future of learning together!No signup needed.*

Similar Questions

  • 1
    Electric current is due to drift of electrons in
    View Solution
  • 2
    The temperature $(T)$ dependence of resistivity $(\rho)$ of a semiconductor is represented by
    View Solution
  • 3
    The current in a triode at anode potential $100\ V$ and grid potential $1.2 \ V$ is $7.5\ mA$. If grid potential is changed to $-2.2\ V$, the current becomes $5.5\ mA$. the value of trans conductance $(g)$ will be
    View Solution
  • 4
    The thermionic emission of electron is due to
    View Solution
  • 5
    Doping of intrinsic semiconductor is done
    View Solution
  • 6
    The impurity atom added to germanium to make it $N$-type semiconductor is
    View Solution
  • 7
    At zero Kelvin a piece of germanium
    View Solution
  • 8
    The introduction of a grid in a triode valve affects plate current by [CPMT 1975, 90]
    View Solution
  • 9
    The cause of the potential barrier in a $P-N$ diode is
    View Solution
  • 10
    For a transistor, in a common emitter arrangement, the alternating current gain $\beta$ is given by
    View Solution