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Physics M.C.Q [1M]

Semiconductor Electronics: Materials, Devices and Simple Circuits · Bihar Board (BSEB) STD 12 Science (BSEB - English Medium). 29 questions.

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M.C.Q [1M]

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29 questions · timed · auto-graded

MCQ 21 Mark
When a forward bias is applied to a p-n junction, it
  • A
    raises the potential barrier.
  • B
    reduces the majority carrier current to zero.
  • ✓
    lowers the potential barrier.
  • D
    None of the above.
Answer
Correct option: C.
lowers the potential barrier.
C
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MCQ 31 Mark
In an unbised p-n junction, holes diffuse from the p-region to n-region because
  • A
    free electrons in the n-region attract them.
  • B
    they move across the junction by the potential difference.
  • ✓
    hole concentration in p-region is more as compared to n-region.
  • D
    All the above.
Answer
Correct option: C.
hole concentration in p-region is more as compared to n-region.
C
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MCQ 41 Mark
Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to $\left(E_g\right)_C,\left(E_g\right)_{S i}$ and $\left(E_g\right)_{G e}$. Which of the following statements is true?
  • A
    $\left( E _{ g }\right)_{ Si }<\left( E _{ g }\right)_{ Ge }<\left( E _{ g }\right)_{ C }$
  • B
    $\left( E _{ g }\right)_{ C }<\left( E _{ g }\right)_{ Ge }>\left( E _{ g }\right)_{ Si }$
  • ✓
    $\left( E _{ g }\right)_{ C }>\left( E _{ g }\right)_{ Si }>\left( E _{ g }\right)_{ Ge }$
  • D
    $\left( E _{ g }\right)_{ C }=\left( E _{ g }\right)_{ Si }=\left( E _{ g }\right)_{ Ge }$
Answer
Correct option: C.
$\left( E _{ g }\right)_{ C }>\left( E _{ g }\right)_{ Si }>\left( E _{ g }\right)_{ Ge }$
C
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MCQ 51 Mark
In an n-type silicon, which of the following statement is true :
  • A
    Electrons are majority carriers and trivalent atoms are the dopants.
  • B
    Electrons are minority carriers and pentavalent atoms are the dopants.
  • ✓
    Holes are minority carriers and pentavalent atoms are the dopants.
  • D
    Holes are majority carriers and trivalent atoms are the dopants.
Answer
Correct option: C.
Holes are minority carriers and pentavalent atoms are the dopants.
C
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MCQ 61 Mark
On installing forward bias on $P - N$ junction, its behavior will be :
  • ✓
    like a conductor
  • B
    like a semiconductor
  • C
    like mechanical valve
  • D
    like a superconductor
Answer
Correct option: A.
like a conductor
(a) - like a conductor
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MCQ 71 Mark
Conduction occurs in semiconductors :
  • A
    unipolar
  • ✓
    bipolar
  • C
    tripolar
  • D
    non-polar
Answer
Correct option: B.
bipolar
(b) - bipolar
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MCQ 101 Mark
The ratio of resistance in forward and reverse bias arrangements in a $P - N$ junction diode is :
  • A
    $10^2: 1$
  • B
    $10^{-2}: 1$
  • ✓
    $1: 10^4$
  • D
    $1: 10^{-4}$
Answer
Correct option: C.
$1: 10^4$
(c) - $1: 10^4$
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MCQ 111 Mark
For P-type semiconductors, impurity elements are used :
  • A
    Arsenic
  • B
    Phosphorus
  • ✓
    Boron
  • D
    Bismuth
Answer
Correct option: C.
Boron
(c) - Boron
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MCQ 121 Mark
Conductivity of semiconductors due to increase in temperature :
  • A
    remains unchanged
  • ✓
    decreases
  • C
    increases
  • D
    first decreases and then increases
Answer
Correct option: B.
decreases
(b) - decreases
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MCQ 131 Mark
The function of rectifier is :
  • A
    to amplify the current
  • B
    to amplify the voltage
  • C
    converting direct current into alternating current
  • ✓
    converting alternating current into direct current
Answer
Correct option: D.
converting alternating current into direct current
(d) - converting alternating current into direct current
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MCQ 141 Mark
Plate resistance when saturated current flows in the diode $r_p$ is :
  • A
    zero
  • ✓
    infinite
  • C
    a certain number
  • D
    data is inadequate
Answer
Correct option: B.
infinite
(b) - infinite
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MCQ 151 Mark
The depletion region of a $P - N$ junction consists of :
  • A
    only electrons
  • B
    only hole
  • C
    both electron and hole
  • ✓
    neutral ion
Answer
Correct option: D.
neutral ion
(d) - neutral ion
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MCQ 161 Mark
When the impurity of arsenic is added to the pure semiconductor germanium, it will be present :
  • A
    P-type semiconductor
  • ✓
    N-type semiconductor
  • C
    Conductor
  • D
    P-N junction
Answer
Correct option: B.
N-type semiconductor
(b) - N-type semiconductor
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MCQ 171 Mark
Specific resistance of a semiconductor on increasing temperature :
  • A
    increases
  • ✓
    decreases
  • C
    remains unchanged
  • D
    first decreases and then increases
Answer
Correct option: B.
decreases
(b) - decreases
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MCQ 181 Mark
Which of the following statements is incorrect?
  • A
    Impurity semiconductor is called extrinsic semiconductor.
  • B
    Both hole and electron are charge carriers.
  • C
    Electrons are minority charge carriers in P-type semiconductor.
  • ✓
    Holes in P-type semiconductor are minority charge carriers.
Answer
Correct option: D.
Holes in P-type semiconductor are minority charge carriers.
(d) - Holes in P-type semiconductor are minority charge carriers.
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MCQ 191 Mark
An N-type semiconductor is:
  • A
    negatively charged
  • B
    positively charged
  • ✓
    insulator
  • D
    none of these
Answer
Correct option: C.
insulator
(c) - insulator
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MCQ 201 Mark
To make P type semiconductor in silicon :
  • A
    Mixing substance of fifth group
  • ✓
    Add substances of third group
  • C
    Mixing substances of group IV
  • D
    Substances of any group can be mixed
Answer
Correct option: B.
Add substances of third group
(b) - Add substances of third group
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MCQ 211 Mark
Bonds in semiconductors are :
  • A
    ionic
  • B
    metallic
  • C
    Van der Waals
  • ✓
    covalent
Answer
Correct option: D.
covalent
(d) - covalent
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MCQ 221 Mark
Those substances whose valence band and conduction band are almost in a state of overlap are :
  • ✓
    Conductor
  • B
    Dielectric
  • C
    Semiconductors
  • D
    All of these
Answer
Correct option: A.
Conductor
(a) - Conductor
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MCQ 231 Mark
At absolute zero temperature, there are negatives germanium and negative silicon are :
  • A
    superconductor
  • B
    good semiconductor
  • ✓
    ideal insulator
  • D
    conductor
Answer
Correct option: C.
ideal insulator
(c) - ideal insulator
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MCQ 241 Mark
In an insulator, the forbidden energy gap between valence band and conduction band is of the following order :
  • A
    1 eV
  • ✓
    6 eV
  • C
    20 eV
  • D
    0.01 eV
Answer
Correct option: B.
6 eV
(b) - 6 eV
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MCQ 251 Mark
The ratio of the number of electrons and holes in intrinsic semiconductors at normal temperature is :
  • A
    $1: 2$
  • B
    $2: 1$
  • ✓
    $1: 1$
  • D
    $1: 3$
Answer
Correct option: C.
$1: 1$
(c) - $1: 1$
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MCQ 261 Mark
Conductivity of semiconductors:
  • A
    does not depend on temperature
  • B
    decreases with increase in temperature
  • ✓
    increases with temperature increase
  • D
    first decreases and then increases
Answer
Correct option: C.
increases with temperature increase
(c) - increases with temperature increase
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MCQ 271 Mark
Which of the following statements is false?
  • A
    The resistance of which semiconductor decreases with increase in temperature?
  • B
    The displacement of the hole in the electric field is in the opposite direction to the displacement of the electron.
  • ✓
    The resistance of a conductor decreases as temperature increases.
  • D
    All types of semiconductors are uncharged.
Answer
Correct option: C.
The resistance of a conductor decreases as temperature increases.
(c) - The resistance of a conductor decreases as temperature increases.
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MCQ 281 Mark
Ideal $P - N$ junction can be used :
  • A
    as an amplifier
  • ✓
    as a rectifier
  • C
    in the form of oscillator
  • D
    as a modulator
Answer
Correct option: B.
as a rectifier
(b) - as a rectifier
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MCQ 291 Mark
A diode as a rectifier changes :
  • A
    in alternating current of direct current
  • ✓
    alternating current into direct current
  • C
    high voltage to low voltage or low voltage to high voltage
  • D
    changing direct current into fixed direct current
Answer
Correct option: B.
alternating current into direct current
(b) - alternating current into direct current
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