Question 12 Marks
Describe briefly, with the help of a diagram, the role of the two important processes involved in the formation of a p-n junction.
Answer
View full question & answer→Two important processes occurring during the formation of a p-n junction are (i) diffusion and (ii) drift.
i. Diffusion: In n-type semiconductor, the concentration of electrons is much greater as compared to concentration of holes; while in p-type semiconductor, the concentration of holes is much greater than the concentration of electrons. When a p-n junction is formed, then due to concentration gradient, the holes diffuse from p-side to n-side $( p \rightarrow n )$ and electrons diffuse from n-side to p-side $( n \rightarrow p )$. This motion of charge carriers gives rise diffusion current across the junction.

ii. Drift: The drift of charge carriers occurs due to electric field. Due to build in potential barrier, an electric field directed from n-region to p-region is developed across the junction. This field causes motion of electrons on p-side of the junction to n-side and motion of holes on n-side of junction to p-side. Thus a drift current starts. This current Depletion is opposite to the direction of diffusion current.

i. Diffusion: In n-type semiconductor, the concentration of electrons is much greater as compared to concentration of holes; while in p-type semiconductor, the concentration of holes is much greater than the concentration of electrons. When a p-n junction is formed, then due to concentration gradient, the holes diffuse from p-side to n-side $( p \rightarrow n )$ and electrons diffuse from n-side to p-side $( n \rightarrow p )$. This motion of charge carriers gives rise diffusion current across the junction.

ii. Drift: The drift of charge carriers occurs due to electric field. Due to build in potential barrier, an electric field directed from n-region to p-region is developed across the junction. This field causes motion of electrons on p-side of the junction to n-side and motion of holes on n-side of junction to p-side. Thus a drift current starts. This current Depletion is opposite to the direction of diffusion current.


