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Question 12 Marks
What is the width of the depletion layer of a P-N junction when it is (i) forward biased (ii) reverse biased?
Answer
(i) In the forward biased state of P-N junction, the width of the depletion layer decreases.
(ii) The depletion layer width increases in the reverse biased state of the P-N junction.
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Question 22 Marks
What are the effects on the depletion layer when the diode is connected in forward bias and reverse bias condition?
Answer
(i) In forward bias the thickness of the depletion layer decreases.
(ii) In reverse bias condition the thickness of the depletion layer increases.
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Question 42 Marks
How does the conductivity of semiconductors increase with increasing temperature?
Answer
Effect of temperature on semiconductors : When the temperature of semiconductors is increased, more electrons get excited by thermal energy and transition from valence band to conduction band. Hence more quantity holes are produced in. In this way, by increasing the temperature, conductivity increases due to increase in the number of charge carriers. The resistance temperature coefficient of semiconductors is negative. Semiconductors behave like insulators at absolute zero temperature.
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Question 52 Marks
Which currents are produced when an external electric field is applied on a semi-conductor?
Answer
When an external electric field is applied on a semiconductor, the charge carriers produce two types of currents :
(1) Drain current : This current flows from the external electric field of charge carriers. It arises as a result of movement along.
(2) Diffusion current : This current arises due to the movement of free charge carriers in a semiconductor from high concentration region to low concentration region.
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Question 62 Marks
Can we physically combine a strip of P-type semiconductor with an N-type semiconductor to form a P-N junction?
Answer
No! Any strip, no matter how flat, will be much rougher than the interatomic crystal gap ( $\sim 2$ to $3 \ Å$ ) and hence regular contact (or continuous contact) at the atomic level will not be possible. The junction will behave like a discontinuity for flowing charge carriers.
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Question 72 Marks
Lattice structure of $C , Si$ and Ge is similar. Still, why is C an insulator while Si and Ge are intrinsic semiconductors?
Answer
The four bonded electrons of atoms of C, Si and Ge are in second, third and fourth orbit respectively. Therefore, the energy (ionic energy $E _{ g }$ ) required to remove an electron from these atoms will be lowest for Ge , higher for Si and highest for C . Thus in Ge and Si the number of free electrons is significant for electrical conduction whereas in C it is negligible.
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Question 82 Marks
Elemental semiconductor and compound semiconductors. Explain with examples.
Answer
Following are the examples of elemental semiconductor and compound semiconductor :
(i) Elemental semiconductors : Si and Ge
(ii) Compound semiconductors :
• Inorganic : CdS, GaAs, CdSe, InP etc.
• Organic anthracenes, doped phthalocyanates etc.
• Organic polymers : polypyrrole, polyaniline, polythiophene etc.
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Question 92 Marks
In half-wave rectification, what is the output frequency if the input frequency is 50 Hz. What is the output frequency of a full-wave rectifier for the same input frequency?
Answer
Half wave rectifier convert only half input a.c. into direct.
Since, Frequency of output a.c. = Frequency of input a.c.
= 50 Hz
Full wave rectification, a.c. rectifies into direct both the halves of the input.
Therefore, Frequency of output a.c.
$=2 \times$ Frequency of input a.c.
$=2 \times 50=100 Hz$
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