The $i-V$ characteristic of a $P-N$ junction diode is shown below. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $2$ volt is applied
A$1 \Omega$
B$0.25 \Omega$
C$0.5 \Omega$
D$5 \Omega$
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B$0.25 \Omega$
The current at $2 V$ is $400 \mathrm{~mA}$ and at $2.1 \mathrm{~V}$ it is $800 \mathrm{~mA}$.
The dynamic resistance in this region
$R=\frac{\Delta V}{\Delta i}=\frac{(2.1-2)}{(800-400) \times 10^{-3}}=\frac{1}{4}=0.25 \Omega$
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The grid voltage of any triode valve is changed from $-1$ volt to $-3$ volt and the mutual conductance is $3 \times 10^{-4} mho$. The change in plate circuit current will be
When the $P$ end of $P-N$ junction is connected to the negative terminal of the battery and the $N$ end to the positive terminal of the battery, then the $P-N$ junction behaves like