Question
In a p-n junction diode, the current I can be expressed as,
$I=I_0\ \text{exp}\Big(\frac{\text{eV}}{2\text{k}_{\text{B}}\text{T}}-1\Big)$
where $I_0$ is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and $I$ is the current through the diode, $k_g$ is the Boltzmann constant $(8.6\times 10^{-5} eV/K)$ and T is the absolute temperature. If for a given diode $I_0 = 5\times 10^{-12} A$ and $T = 300 K$, then,
$I=I_0\ \text{exp}\Big(\frac{\text{eV}}{2\text{k}_{\text{B}}\text{T}}-1\Big)$
where $I_0$ is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and $I$ is the current through the diode, $k_g$ is the Boltzmann constant $(8.6\times 10^{-5} eV/K)$ and T is the absolute temperature. If for a given diode $I_0 = 5\times 10^{-12} A$ and $T = 300 K$, then,
- What will be the forward current at a forward voltage of 0.6V?
- What will be the increase in the current if the voltage across the diode is increased to 0.7V?
- What is the dynamic resistance?
- What will be the current if reverse bias voltage changes from 1V to 2V?
