Question
The breakdown in a reverse biased p-n junction diode is more likely to occur due to.
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Answer
- Large velocity of the minority charge if the doping concentration is small.
When it comes to he breakdown in a reverse biased PN junction diode, it will probably happen only because of the accumulation of the higher charge at the biased region and large velocity of the minority charge if the doping concentration is small. This is the main cause the breakdown.
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