Question
The current−voltage characteristic of an ideal p-n junction diode is given by $\text{i}=\text{i}_0\Big(\text{e}^{\frac{\text{eV}}{\text{kT}}}-1\Big)$ where, the drift current $i_0$ equals $10\mu\text{A}.$ Take the temperature T to be 300K.
- Find the voltage $V_0$ for which $\text{e}^{\frac{\text{eV}}{\text{KT}}}=100.$ One can neglect the term 1 for voltages greater than this value.
- Find an expression for the dynamic resistance of the diode as a function of $V$ for $V > V_0$.
- Find the voltage for which the dynamic resistance is $0.2\Omega.$
