The valence of an impurity added to germanium crystal in order to convert it into a $P$-type semi conductor is
[MP PMT 1989; CPMT 1987]
Download our appand get started for free
Experience the future of education. Simply download our apps or reach out to us for more information. Let's shape the future of learning together!No signup needed.*
Similar Questions
- 1In a transistor configuration $\beta$-parameter isView Solution
- 2Barrier potential of a $P-N$ junction diode does not depend onView Solution
- 3View SolutionSemiconductor is damaged by the strong current due to
- 4View SolutionIn a negative logic the following wave form corresponds to the
- 5View SolutionThe forbidden gap in the energy bands of germanium at room temperature is about
- 6In the study of transistor as an amplifier, if $\alpha=I_c / I_e$ and $\beta=I_c / I_b$, where $I_c, I_b$ and $l$ are the collector, base and emitter currents, thenView Solution
- 7View SolutionIn semiconductors at a room temperature
- 8View SolutionThe correct relation for a triode is
- 9The electron mobility in $N$-type germanium is $3900 cm / v - s$ and its conductivity is $6.24 mho / cm$, then impurity concentration will be if the effect of cotters is negligibleView Solution
- 10An $N$-type and $P$-type silicon can be obtained by doping pure silicon withView Solution