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The amplification factor of a triode is $18$ and its plate resistance is $8 \times 10 \Omega$. A load resistance of $10 \Omega$ is connected in the plate circuit. The voltage gain will be
$P$-type semiconductor is formed whenA. As impurity is mixed in $S i$B. $A$ Impurity is mixed in $S i$C. $B$ impurity is mixed in $G e$D. $P$ impurity is mixed in $G e$