$(A)$ $\left[ Ni \left( H _{2} O \right)_{2}( en )_{2}\right]^{2+}$
$(B)$ $\left[ Ni \left( H _{2} O \right)_{4}(\text { en })\right]^{2+}$ અને
$(C)$ $\left[ Ni ( en )_{3}\right]^{2+}$
(B) \(\left[ Ni \left( H _{2} O \right)_{4}( en )\right]^{2+}\)
(C) \(\left[ Ni ( en )_{3}\right]^{2+}\)
en is SFL (strong field ligand)
As the number of en (strong ligand) increase splitting also increases.
So, \(\Delta_{0}\) increases.
i.e. maximum energy will be absorbed in case of option \(C.\)
So the order is \(C\,>\,A\,>\,B\)
સૂચિ $-I$ (આયન સામેલ છે) |
સૂચિ $-II$ (કરતા) |
$(i)\, Ni^{2+}$ | $(A)$ સોડિયમ થાયોસલ્ફેટ |
$(ii)\, Ag^+$ |
$(B)$ સોડિયમ નાઇટ્રોપ્રુસાઈડ |
$(iii)\, Cu^{2+}$ | $(C)$ એમોનિયા |
$(iv)\,S^{2-}$ | $(D)$ ડાયમિથાઇલ ગ્લાયોક્સાઇમ |
$(i)\,\,\,-\,\,\,(ii)\,\,\,-\,\,\,(iii)\,\,\,-\,\,\,(iv)$