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Question 14 Marks
Explain the reverse blas characteristics of $p-n$ junction diode with proper graph.
Answer
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The circuit arrangement for studying the V-I characteristics of a diode in Reverse bias is shown in the figure.
As shown the battery is connected to the diode through a potentiometer (or rheostat) so that the applied voltage to the diode can be changed.
For different values of voltages, the value of the current is noted, and as shown in fig (b), a `graph of $V \rightarrow I$ is obtained. The current obtained in the reverse bias is of the order of micro ampere, $(\mu A )$. This current is known as reverse saturation current.
For the diode in reverse bias, the current is very small and almost remains constant (increases very slowly) with change in bias.
Beyond a particular value of characteristic voltage, diode current changes/increases suddenly with small change in voltage. The reverse voltage, at which this phenomenon is seen is called Breakdown voltage.
In reverse bias, after the breakdown occurs, voltage almost remains constant. Regulator circuits are prepared using this characteristic of a diode.
In reverse bias mode, the dynamic resistance of $p-n$ junction is of the order of $10^6 \Omega( M \Omega)$.
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Question 24 Marks
Explain the forward bias characteristics of $p-n$ junction diode with necessary graph.
Answer
Image

The circuit arrangement for studying the V-I characteristics of a diode, (i.e. Variation of current I as a function of applied voltage V ) is shown in fig. (a).
As shown in Fig., the battery is connected to the diode through a potentiometer (or rheostat) so that the applied voltage to the diode can be changed.
For different values of voltages, the value of current is noted. A graph between V and I is obtained as shown in fig. (b). For the forward bias, the current is of the order of $m A$.
As it is seen in the fig., in forward bias, the current first increases very slowly, almost negligibly till the voltage across the diode crosses a certain value.
After the characteristic voltage, the diode current increases significantly (exponentially) even for a very small increase in the diode bias voltage. This voltage is called the threshold voltage or cut-in voltage ( $\sim 0.2 V$ for germanium diode and $\sim 0.7 V$ for silicon diode).
For diodes, the ratio of small change in voltage $\Delta V$ to a small change in current $\Delta I$ is called dynamic resistance.
$r_d=\frac{\Delta V }{\Delta I }$
Its unit is ohm $(\Omega)$.
The resistance of the diode in forward bias mode is approximately between $10 \Omega$ to $100 \Omega$.
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4 Marks Questions - Physics STD 12 Science Questions - Vidyadip