For a triode, at $V_g=-1$ volt, the following observations were taken $V_p=75 V , I_p=2 mA , V_p=100 V , I_p=4 mA$. The value of plate resistance will be
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The $i-V$ characteristic of a $P-N$ junction diode is shown below. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $2$ volt is applied
A $G e$ specimen is doped with $A l$. The concentration of acceptor atoms is $\sim 10^{-}$atoms $/ m$. Given that the intrinsic concentration of electron hole pairs is $\sim 10^{19} / m ^3$, the concentration of electrons in the specimen is