In $P$-type semiconductors, holes are majority charge carriers.
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In a semiconductor, the concentration of electrons is $8 \times 10^{14} / cm ^3$ and that of the holes is $5 \times 10^{12} cm ^3$. The semiconductor is
The variation of anode current in a triode corresponding to a change in grid potential at three different values of the plate potential is shown in the diagram. The mutual conductance of the triode is
Which is the wrong statement in following sentences? A device in which $P$ and $N$-type semiconductors are used is more useful then a vacuum type because
The amplification factor of a triode is $20$ and trans-conductance is $3$ milli mho and load resistance $3 \times 10^4\ \Omega$, then the voltage gain is
A common emitter amplifier is designed with NPN transistor $(\alpha= 0.99 ).$ The input impedance is $1 K \Omega$ and load is $10 k \Omega$. The voltage gain will be