In the forward bias arrangement of a $P N$-junction diode
AThe $N$ end is connected to the positive terminal of the battery
BThe $P$ end is connected to the positive terminal of the battery
CThe direction of current is from $N$-end to $P$-end in the diode
DThe $P$ end is connected to the negative terminal of battery
[MP PMT 1994, 96, 99]
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BThe $P$ end is connected to the positive terminal of the battery
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The $i-V$ characteristic of a $P-N$ junction diode is shown below. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $2$ volt is applied
A semiconductor $X$ is made by doping a germanium crystal with arsenic $(Z=33)$. A second semiconductor $Y$ is made by doping germanium with indium $(Z=49)$. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct