$N P N$ transistor are preferred to $P N P$ transistor because they have
A
Low cost
B
Low dissipation energy
C
Capability of handing large power
D
Electrons having high mobility than holes
[J \& K CET 2005]
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D
Electrons having high mobility than holes
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In a semiconductor, the concentration of electrons is $8 \times 10^{14} / cm ^3$ and that of the holes is $5 \times 10^{12} cm ^3$. The semiconductor is
A potential barrier of $0.50 \quad V$ exists across a $P-N$ junction. If the depletion region is $5.0 \times 10^{-7} m$ wide, the intensity of the electric field in this region is