Which of the following statements concerning the depletion zone of an unbiased $P N$ junction is (are) true
A
The width of the zone is independent of the densities of the dopants (impurities)
B
The width of the zone is dependent on the densities of the dopants
C
The electric field in the zone is produced by the ionized dopant atoms
D
A and B both
[IIT-JEE 1995]
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D
A and B both
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Consider the following statements $A$ and $B$ and identify the correct choice of the given answers$A$ : The width of the depletion layer in a $P-N$ junction diode increases in forwards bias$B$ : In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap