The resistance of a germanium junction diode whose $V-I$ is shown in figure is $\left(V_k=0.3 V \right)$Image
  • A$5 k \Omega$
  • B$0.2 k \Omega$
  • C$2.3 k \Omega$
  • D$\left(\frac{10}{2.3}\right) k \Omega$
art

Download our app
and get started for free

Experience the future of education. Simply download our apps or reach out to us for more information. Let's shape the future of learning together!No signup needed.*

Similar Questions

  • 1
    In a $P N$ junction photo cell, the value of photo-electromotive force produced by monochromatic light is proportional to [CBSE PMT 2004]
    View Solution
  • 2
    In the circuit of a triode valve, there is no change in the plate current, when the plate potential is increased from $200$ volt to $220$ volt and the grid potential is decreased from $-0.5$ volt to $-1.3$ volt. The amplification factor of this valve is
    View Solution
  • 3
    In comparison to a half wave rectifier, the full wave rectifier gives lower
    View Solution
  • 4
    The value of plate current in the given circuit diagram will be
    Image
    View Solution
  • 5
    When the $P$ end of $P-N$ junction is connected to the negative terminal of the battery and the $N$ end to the positive terminal of the battery, then the $P-N$ junction behaves like
    View Solution
  • 6
    In the depletion region of an unbiased $P-N$ junction diode there are
    View Solution
  • 7
    In a transistor in $CE$ configuration, the ratio of power gain to voltage gain is
    View Solution
  • 8
    The valence of the impurity atom that is to be added to germanium crystal so as to make it a $N$-type semiconductor, is
    View Solution
  • 9
    The cause of the potential barrier in a $P-N$ diode is
    View Solution
  • 10
    Serious draw back of the semiconductor device is
    View Solution