The valence of the impurity atom that is to be added to germanium crystal so as to make it a $N$-type semiconductor, is
[MNR 1993; MP PET 1994; CBSE PMT 1999; AlIMS 2000]
Download our appand get started for free
Experience the future of education. Simply download our apps or reach out to us for more information. Let's shape the future of learning together!No signup needed.*
Similar Questions
- 1$14 \times 10^{15}$ electrons reach the anode per second. If the power consumed is 448 milliwatts, then the plate (anode) voltage isView Solution
- 2A $G e$ specimen is doped with $A l$. The concentration of acceptor atoms is $\sim 10^{-}$atoms $/ m$. Given that the intrinsic concentration of electron hole pairs is $\sim 10^{19} / m ^3$, the concentration of electrons in the specimen isView Solution
- 3A $P-$type semiconductor can be obtained by addingView Solution
- 4The valence of an impurity added to germanium crystal in order to convert it into a $P$-type semi conductor isView Solution
- 5In a $P N$ junction photo cell, the value of photo-electromotive force produced by monochromatic light is proportional to [CBSE PMT 2004]View Solution
- 6In the case of constants $\alpha$ and $\beta$ of a transistorView Solution
- 7The depletion layer in the $P-N$ junction region is caused byView Solution
- 8A source voltage of $8 V$ drives the diode in fig. through a currentlimiting resistor of $100 ohm$. Then the magnitude of the slope load line on the $V-I$ characteristics of the diode isView Solution
- 9View SolutionWhen NPN transistor is used as an amplifier
- 10The given figure shows the wave forms for two inputs $A$ and $B$ and that for the output $Y$ of a logic circuit. The logic circuit isView Solution
