The symbol given in figure represents
Image
  • A
    NPN transistor
  • B
    PNP transistor
  • CForward biased $P N$ junction diode
  • DReverse biased $N P$ junction diode
[AMU 1995, 96]
art

Download our app
and get started for free

Experience the future of education. Simply download our apps or reach out to us for more information. Let's shape the future of learning together!No signup needed.*

Similar Questions

  • 1
    $N$-type semiconductors will be obtained, when germanium is doped with
    View Solution
  • 2
    Which one is in forward bias
    View Solution
  • 3
    In the study of transistor as an amplifier, if $\alpha=I_c / I_e$ and $\beta=I_c / I_b$, where $I_c, I_b$ and $l$ are the collector, base and emitter currents, then
    View Solution
  • 4
    The plate characteristic curve of a diode in space charge limited region is as shown in the figure. The slope of curve at point $P$ is $5.0 m A / V$. The static plate resistance of diode will be
    Image
    View Solution
  • 5
    In a $P N P$ transistor working as a common-base amplifier, current gain is $0.96$ and emitter current is $7.2\ mA$. The base current is
    View Solution
  • 6
    In a $P$-type semiconductor, germanium is doped with
    View Solution
  • 7
    In the diagram, the input is across the terminals $A$ and $C$ and the output is across the terminals $B$ and $D$, then the output is
    Image
    View Solution
  • 8
    The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are
    View Solution
  • 9
    The energy gap of silicon is $1.14\  eV$. The maximum wavelength at which silicon will begin absorbing energy is
    View Solution
  • 10
    The most commonly used material for making transistor is
    View Solution