In forward biasing $P$-side is connected with positive terminal and $\mathrm{N}$-side with negative terminal of the battery
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If $R_p=7 K \Omega, g_m=2.5$ millimho, then on increasing plate voltage by $50 V$, how much the grid voltage is changed so that plate current remains the same
$P$-type semiconductor is formed whenA. As impurity is mixed in $S i$B. $A$ Impurity is mixed in $S i$C. $B$ impurity is mixed in $G e$D. $P$ impurity is mixed in $G e$