To obtain a $P$-type germanium semiconductor, it must be doped with
  • A
    Arsenic
  • B
    Antimony
  • C
    Indium
  • D
    Phosphorus
[CBSE PMT 1997; Pb. PET 2000]
art

Download our app
and get started for free

Experience the future of education. Simply download our apps or reach out to us for more information. Let's shape the future of learning together!No signup needed.*

Similar Questions

  • 1
    Which is the wrong statement in following sentences? A device in which $P$ and $N$-type semiconductors are used is more useful then a vacuum type because
    View Solution
  • 2
    Correct relation for triode is
    View Solution
  • 3
    The $i-V$ characteristic of a $P-N$ junction diode is shown below. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $2$ volt is applied
    Image
    View Solution
  • 4
    In the half-wave rectifier circuit shown. Which one of the following wave forms is true for $V_{C D}$, the output across $C$ and $D$ ?Image
    View Solution
  • 5
    For the diode, the characteristic curves are given at different temperature. The relation between the temperatures is

    Image

    View Solution
  • 6
    The slope of plate characteristic of a vacuum tube diode for certain operating point on the curve is $10^{-3} \frac{ mA }{ V }.$ The plate resistance of the diode and its nature respectively
    View Solution
  • 7
    If the two ends $P$ and $N$ of a $P-N$ diode junction are joined by a wire
    View Solution
  • 8
    When a semiconductor is heated, its resistance
    View Solution
  • 9
    For a thermionic emitter (metallic) if $J$ represents the current density and $T$ is its absolute temperature then the correct curve between $\log _e \frac{J}{T^2}$ and $\frac{1}{T}$ is
    View Solution
  • 10
    The correct relation for a triode is
    View Solution