Which is the correct relation for forbidden energy gap in conductor, semi conductor and insulator
A$\Delta E g_{ c }>\Delta E g_{ sc }>\Delta E g_{\text {insulator }}$
B$\Delta E g_{\text {insulator }}>\Delta E g_{\text {sc }}>\Delta E g_{\text {conductor }}$
C$\Delta E g_{\text {conductor }}>\Delta E g_{\text {insulator }}>\Delta E g_{\text {sc }}$
D$\Delta E g_{\text {sc }}>\Delta E g_{\text {conductor }}>\Delta E g_{\text {insulator }}$
[RPMT 2001; AIEEE 2002]
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B$\Delta E g_{\text {insulator }}>\Delta E g_{\text {sc }}>\Delta E g_{\text {conductor }}$
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The width of forbidden gap in silicon crystal is $1.1\ eV$. When the crystal is converted in to a $N$-type semiconductor the distance of Fermi level from conduction band is