The width of forbidden gap in silicon crystal is $1.1\ eV$. When the crystal is converted in to a $N$-type semiconductor the distance of Fermi level from conduction band is
AGreater than $0.55 eV$
BEqual to $0.55 eV$
CLesser than $0.55 eV$
DEqual to $1.1 eV$
[EAMCET (Med.) 1999]
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CLesser than $0.55 eV$
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The amplification factor of a triode is $20.$ If the grid potential is reduced by $0.2$ volt then to keep the plate current constant its plate voltage is to be increased by
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