The width of forbidden gap in silicon crystal is $1.1\ eV$. When the crystal is converted in to a $N$-type semiconductor the distance of Fermi level from conduction band is
  • AGreater than $0.55 eV$
  • BEqual to $0.55 eV$
  • CLesser than $0.55 eV$
  • DEqual to $1.1 eV$
[EAMCET (Med.) 1999]
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