The resistance of intrinsic semiconductors decrease with increase of temperature
BDoping pure $S i$ with trivalent impurities give $P$-type semiconductors
CThe majority carriers in $N$-type semiconductors are holes
DA $P N$-junction can act as a semiconductor diode
[IIT-JEE 1997 Re-Exam]
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CThe majority carriers in $N$-type semiconductors are holes
In $N$-type semiconductor majority charge carriers are electrons.
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The figure represents variation of triode parameter ( $\mu$ or $r$ or $g$ ) with the plate current. The correct variation of $\mu$ and $r$ are given, respectively by the curves
Carbon, silicon and Germanium atoms have four valence electrons each. Their valence and conduction band are separated by energy band gaps represented by $(E) .(E)$ and $(E)$ respectively. Which one of the following relationship is true in their case