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Electronics JEE physics - Electronics

CBSE - STD 12 Science - JEE physics (CBSE - English Medium). 343 questions in this chapter.

Question types

Electronics question types

343 questions across 2 question groups — pick any mix to generate a JEE physics paper with step-by-step answer keys.

343
Questions
2
Question groups
5
Question types
Sample Questions

Electronics questions

One sample from each question group in this chapter. Select any group above to see the full set with answer keys.

Q 1Assertion & Reason1 Mark
Assertion : If the temperature of a semiconductor is increased then it's resistance decreases.
Reason : The energy gap between conduction band and valence band is very small
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Q 2Assertion & Reason1 Mark
Assertion : The temperature coefficient of resistance is positive for metals and negative for P-type semiconductor.
Reason : The effective charge carriers in metals are negatively charged whereas in $P$-type semiconductor they are positively charged.
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Q 3Assertion & Reason1 Mark
Assertion : In a common emitter transistor amplifier the input current is much less than the output current.
Reason : The common emitter transistor amplifier has very high input impedance.
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Q 4Assertion & Reason1 Mark
Assertion : The number of electrons in a $P$-type silicon semiconductor is less than the number of electrons in a pure silicon semiconductor at room temperature.
Reason : it is due to law of mass action.
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Q 5Assertion & Reason1 Mark
Assertion : The logic gate NOT can be built using diode.
Reason : The output voltage and the input voltage of the diode have $180^{\circ}$ phase difference.
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Q 6MCQ1 Mark
The variation of anode current in a triode corresponding to a change in grid potential at three different values of the plate potential is shown in the diagram. The mutual conductance of the triode isImage
  • ✓
    $2.5 m$ mho
  • B
    $5_8(0 \% \vec{m})$ mho
  • C
    $7.5 m$ mho
  • D
    $10.0 m$ mho

Answer: A.

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Q 7MCQ1 Mark
When forward bias is applied to a $P-N$ junction, then what happens to the potential barrier $V_B$, and the width of charge depleted region $x$
  • A
    $V_B$ increases, $x$ decreases
  • B
    $V_B$ decreases, $x$ increases
  • C
    $V_B$ increases, $x$ increases
  • ✓
    $V_B$ decreases, $x$ decreases

Answer: D.

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Q 8MCQ1 Mark
A potential barrier of $0.50 \quad V$ exists across a $P-N$ junction. If the depletion region is $5.0 \times 10^{-7} m$ wide, the intensity of the electric field in this region is
  • ✓
    $1.0 \times 10^6 V / m$
  • B
    $1.0 \times 10^5 V / m$
  • C
    $2.0 \times 10^5 V / m$
  • D
    $2.0 \times 10^6 V / m$

Answer: A.

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Q 9MCQ1 Mark
Zener breakdown in a semi-conductor diode occurs when
  • A
    Forward current exceeds certain value
  • ✓
    Reverse bias exceeds certain value
  • C
    Forward bias exceeds certain value
  • D
    Potential barrier is reduced to zero

Answer: B.

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Q 10MCQ1 Mark
If a full wave rectifier circuit is operating from $50 Hz$ mains, the fundamental frequency in the ripple will be
  • A
    $50 Hz$
  • B
    $70.7 Hz$
  • ✓
    $100 Hz$
  • D
    $25 Hz$

Answer: C.

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