Question types

Semiconductors and Semiconductor Devices question types

71 questions across 5 question groups — pick any mix to generate a Physics paper with step-by-step answer keys.

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Sample Questions

Semiconductors and Semiconductor Devices questions

One sample from each question group in this chapter. Select any group above to see the full set with answer keys.

Two identical capacitors A and B are charged to the same potential V and are connected in two circuits at t = 0 as shown in figure. The charges on the capahltors at a time t = CR are, respectively:
  • A
    $\text{VC}, \text{VC}$
  • $\frac{\text{VC}}{\text{e}}, \text{VC}$
  • C
    $\text{VC}, \frac{\text{VC}}{\text{e}}$
  • D
    $\frac{\text{VC}}{\text{e}}, \frac{\text{VC}}{\text{e}}$

Answer: B.

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A semiconductor is doped with a donor impurity:
  • A
    The hole concentration increases.
  • B
    The hole concentration decreases.
  • The electron concentration increases.
  • D
    The electron concentration decreases.

Answer: C.

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The impurity atoms with which pure silicon may be doped to make it a $p-$type semiconductor are those of:
  • A
    Phosphorus.
  • B
    Boron.
  • C
    Aluminium.
  • Both  $B$ and $C$

Answer: D.

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Electric conduction in a semiconductor takes place due to:
  • A
    Electrons only.
  • B
    Holes only.
  • Both electrons and holes.
  • D
    Neither electrons nor holes.

Answer: C.

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The diffusion current in a p-n junction is:
  • A
    From the n-side to the p-side.
  • From the p-side to the n-side.
  • C
    From the n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse-biased.
  • D
    From the p-side to the n-side if the junction is forward-biased and in the opposite direction if it is reverse-biased.

Answer: B.

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When a semiconducting material is doped with an impurity, new acceptor levels are created. In a particular thermal collision, a valence electron receives an energy equal to 2kT and just reaches one of the acceptor levels. Assuming that the energy of the electron was at the top edge of the valence band and that the temperature T is equal to 300K, find the energy of the acceptor levels above the valence band.
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When a p-type impurity is doped in a semiconductor, a large number of holes are created. This does not make the semiconductor charged. But when holes diffluse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.
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In a transistor:
  • A
    The emitter has the least concentration of impurity.
  • B
    The collector has the least concentration of impurity.
  • The base has the least concentration of impurity.
  • D
    All the three regions have equal concentrations of impurity.

Answer: C.

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An incomplete sentence about transistors is given below:
The emitter $......$ junction is $.......$ and the collector $....$ junction is $.....$ The appropriate words for the dotted empty positions are, respectively.
  • A
    'Collector' and 'base'.
  • B
    'Base' and 'emitter'.
  • C
    'Collector' and 'emitter'.
  • 'Base' and 'base'.

Answer: D.

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The drift current in a p-n junction is $20.0\mu\text{A}.$ Estimate the number of electrons crossing a cross-section per second in the depletion region.
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Consider an amplifier circuit using a transistdf. The output power is several times greater than the input power. Where does the extra power come from?
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Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is $20\mu\text{A}.$
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Find the maximum wavelength of electromagnetic radiation which can create a hole-electron pair in germanium. The band gap in germanium is 0.65eV.
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Q 173 Marks Question3 Marks
There are energy bands in a solid. Do we have really continuous energy variation in a band or do we have very closely spaced but still discrete energy levels?
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Q 183 Marks Question3 Marks
Indium antimonide has a band gap of 0.23eV between the valence and the conduction band. Find the temperature at which kT equals the band gap.
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Q 193 Marks Question3 Marks
The band gap for silicon is $1.1eV.$
  1. Find the ratio of the band gap to $kT$ for silicon at room temperature $300K.$
  2. At what temperature does this ratio become one tenth of the value at $300K?$
$($Silicon will not retain its structure at these high temperatures.$)$
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The conductivity of an intrinsic samiconductor depends on temperature as $\sigma=\sigma_0\text{ e}^{\frac{-\Delta\text{E}}{2\text{kT}}}$ where $\sigma_0$ is a constant. Find the temperature at which the conductivity pf an intrinsic germanium semiconductor will be double of its value at T = 300K. Assume that the gap for germanium is 0.650eV and remains constant as the temperature is increased.
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Consider a p-n junction diode having the characteristic $\text{i}-\text{i}_0\Big(\text{e}^{\frac{\text{eV}}{\text{kT}}}-1\Big)$ where $\text{i}_0=20\mu\text{A}.$ The diode is operated at T = 300K.
  1. Find the current through the diode when a voltage of 300mV is applied across it in forward bias.
  2. At what voltage does the current double?
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When a p-n junction is reverse-biased, the current becomes almost constant at $25\mu\text{A}.$ When it is forwardbiased at 200mV, a current of $75\mu\text{A}$ is obtained. Find the magnitude of diffusion current when the diode is,
  1. Unbiased.
  2. Reverse-biased at 200mV.
  3. Forward-biased at 200mV.
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