$P$-type semiconductors are made by adding impurity element
A$A s$
B$P$
C$B$
D$B i$
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C$B$
Because boron is a trivalent impurity.
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For a triode, at $V_g=-1$ volt, the following observations were taken $V_p=75 V , I_p=2 mA , V_p=100 V , I_p=4 mA$. The value of plate resistance will be
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