A transistor is used in common emitter mode as an amplifier. Then
A
(a) The base-emitter junction is forward biased
B
(b) The base-emitter junction is reverse biased
C
(c) The input signal is connected in series with the voltage applied to the base-emitter junction
D
(d) The input signal is connected in series with the voltage applied to bias the base collector junction
Download our app for free and get started
Download our app
and get started for free
Experience the future of education. Simply download our apps or reach out to us for more information. Let's shape the future of learning together!No signup needed.*
The variation of anode current in a triode corresponding to a change in grid potential at three different values of the plate potential is shown in the diagram. The mutual conductance of the triode is
The plate resistance of a triode is $2.5 \times 10^4 \Omega$ and mutual conductance is $2 \times 10^{-3} mho$. What will be the value of amplification factor
Consider the following statements $A$ and $B$ and identify the correct choice of the given answers$A$ : The width of the depletion layer in a $P-N$ junction diode increases in forwards bias$B$ : In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap
Consider an NPN transistor amplifier in common-emitter configuration. The current gain of the transistor is $100.$ If the collector current changes by $1\ mA$, what will be the change in emitter current