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Light emitting diode is a photoelectric device which converts electrical energy into light energy. It is a heavily doped $p-n$ junction diode which under forward biased emits spontaneous radiation. The general shape of the $I-V$ characteristics of an $\text{LED}$ is similar to that of a normal $p-n$ junction diode, as shown. The barrier potentials are much higher and slightly different for each colour.

1. The $I-V$ characteristic of an $\text{LED}$ is:

2. The schematic symbol of light emitting diode is $\text{(LED)}.$

3. An $\text{LED}$ is constructed from a p-n junction based on a certain $Ga-$ As $-P$ semiconducting material whose energy gap is $1.9eV$. Identify the colour of the emitted light.

1. Blue.
2. Red.
3. Violet.
4. Green.

4. Which one of the following statement is not correct in the case of light emitting diodes?

1. It is a heavily doped $p-n$ junction.
2. It emits light only when it is forward biased.
3. It emits light only when it is reverse biased.
4. The energy of the tight emitted is less than the energy gap of the semiconductor used.

5. The energy of radiation emitted by $\text{LED}$ is:

1. Greater than the band gap of the semiconductor used.
2. Always less than the band gap of the semiconductor used.
3. Always equal to the band gap of the semiconductor used.
4. Equal to or less than the band gap of the semiconductor used.